| 摘要 |
<p>A redundant circuit for a semiconductor memory device includes a programmable circuit for selectively generating at least one first address corresponding to a defective memory row or column line, and shifter circuitry for remapping second addresses which are greater than the first address to row/column lines. For each second address which is greater than the first address, the shifter circuitry remaps the second address to a row/column line which was initially mapped to an immediately higher address relative to the second address. <IMAGE></p> |
