Ceramic coating process, especially PVD or PECVD of silicon carbide e.g. for cutting tools, semiconductor devices and space travel applications, comprises depositing an amorphous ceramic layer at well below the ceramic melting temperature

摘要

Ceramic coating of a substrate comprises depositing an amorphous ceramic layer at well below the ceramic melting temperature especially by PVD or PECVD. An Independent claim is also included for a ceramic coating produced by the above process, the coating consisting of amorphous SiC. Preferred Features: The coating is deposited at below 500 (especially below 450) deg C using an r.f. magnetron.