| 摘要 |
A method for forming a deposited film by a bias sputtering process comprises the steps of generating plasma between a target electrode holding a target material provided in a vacuum container and a substate electrode holding a substrate for forming deposited film, provided opposingly to the target electrode, by the use of a high-frequency energy to cause the target material to undergo sputtering, and applying a bias voltage to at least one of the target electrode and the substate electrode to form a deposited film comprised of atoms having deposited by sputtering on the substrate, wherein; a mixed-gas environment comprising a mixture of an inert gas and a hydrogen gas is formed in the vacuum container, and the target material is subjected to sputtering while controlling H2O gas, CO gas and CO2 gas in the mixed-gas environment to have a partial pressure of 1.0 x 10<-><8> Torr or less each, to form an epitaxial film on the substrate while maintaining a substrate temperature in the range of from 400 DEG C to 700 DEG C. <IMAGE> |
