发明名称 ABRASIVE AND POLISHING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To vary polishing rate for a metallic film, barrier film and insulating film arbitrarily by using silica, having a predetermined specific surface area as abrasive grains and mixing oxalic acid, an oxidizing agent and water in properly adjusted amounts with the silica. SOLUTION: As abrasive grains, silica is used whose specific surface area is about 20 m2/g or larger and smaller than about 80 m2/g. By varying the concentration of silica and the concentrations of oxalic acid and an oxidizing agent of other components, the polishing speed is adjusted arbitrarily. The remaining component is water. The concentration of silica is preferably within the range of about 0.1-20 wt.%. Furthermore, the concentration of oxalic acid is preferably within the range of about 0-1 wt.%. When polishing a metallic film 4, the concentration of oxalic acid is set to a larger value, and for reducing the polishing speed for the film 4, the concentration of oxalic acid is set to a smaller value. Still further, the concentration of the oxidizing agent is preferably within the range of about 0-10 wt.%. When polishing the film 4, the concentration of the oxidizing agent is set to a highish value, and to reduce the polishing speed for the film 4, the concentration of the oxidizing agent is set to a lowish value.</p>
申请公布号 JP2000306869(A) 申请公布日期 2000.11.02
申请号 JP19990111484 申请日期 1999.04.19
申请人 TOKUYAMA CORP 发明人 KATO HIROSHI;HAYASHI KAZUHIKO;KONO HIROYUKI
分类号 B24B37/00;C09K3/14;H01L21/304;(IPC1-7):H01L21/304 主分类号 B24B37/00
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