发明名称 GIANT MAGNETORESISTIVE SENSOR WITH PINNING LAYER
摘要 <p>A giant magnetoresistive stack (10) for use in a magnetic read head includes a NiFeCr seed layer (12), a ferromagnetic free layer (14), a nonmagnetic spacer layer (16), a ferromagnetic pinned layer (18), and a PtMnX pinning layer (20), where X is either Cr or Pd. The ferromagnetic free layer (14) has a rotatable magnetic moment and is positioned adjacent to the NiFeCr seed layer (12). The ferromagnetic pinned layer (18) has a fixed magnetic moment and is positioned adjacent to the PtMnX pinning layer (20). The nonmagnetic spacer layer (16) is positioned between the free layer (14) and the pinned layer (18).</p>
申请公布号 WO2000065578(A1) 申请公布日期 2000.11.02
申请号 US1999020004 申请日期 1999.09.01
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址