Voltage detection circuit for use in semiconductor memory component, includes compensation current generation section for preventing potential of signalling line VPP from rising steeply

摘要

A compensation current generation section (141) provided for preventing the potential of signalling line VPP from rising steeply, comprises NMOS transistors (246-250), metal line (251) and fuse elements (253,254). A compensation current is delivered to the fuse elements, and to the node (256) via the NMOS transistor (246) in accordance with the value of current which flows through the NMOS transistor (241) so that the potential of signalling line VPP rises slowly.