| 发明名称 |
METHOD OF MENDING INTERCONNECTION AND FOCUSED ION BEAM DEVICE |
| 摘要 |
First gas supply means (17a) supplies a first gas for forming silicon-base insulating film, and second gas supply means (17b) supplies a second or oxidative gas. In an atmosphere containing the first and second gases, an ion beam (29) is applied to an opening in a sample (27) to deposit silicon-base insulating film in the opening.
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| 申请公布号 |
WO0065644(A1) |
申请公布日期 |
2000.11.02 |
| 申请号 |
WO2000JP02557 |
申请日期 |
2000.04.19 |
| 申请人 |
SEIKO INSTRUMENTS INC.;HAGIWARA, RYOJI;KOYAMA, YOSHIHIRO |
发明人 |
HAGIWARA, RYOJI;KOYAMA, YOSHIHIRO |
| 分类号 |
H01L21/316;H01L21/768;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/316 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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