发明名称 FORMING METHOD OF WIRING PATTERN AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a forming method of a wiring pattern capable of forming a fine wiring pattern without using resist like a dry film, and a semiconductor device in which a semiconductor element is mounted on a wiring board formed by the above method. SOLUTION: This forming method includes a first process wherein a surface layer of a copper foil 202 formed on an insulating substrate 201 is changed to Cu3P(copper phosphide) having etching durability, and a Cu3P film 203 is formed; a second process wherein parts in the Cu3P film 203 which correspond to a desired pattern are left, and the Cu3P film 203 in the other parts is eliminated; a third process for eliminating the copper foil 202 except the parts corresponding to the desired pattern; and a forth process wherein the Cu3P film 203 corresponding to the desired pattern of the copper foil 202 is eliminated, and the desired pattern is formed on the insulating substrate 201.
申请公布号 JP2000307217(A) 申请公布日期 2000.11.02
申请号 JP19990117492 申请日期 1999.04.26
申请人 SHINKO ELECTRIC IND CO LTD 发明人 MASHINO NAOHIRO;MATSUDA YUICHI;SASAKI MASAYUKI
分类号 H05K3/06;(IPC1-7):H05K3/06 主分类号 H05K3/06
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