| 摘要 |
PROBLEM TO BE SOLVED: To suppress lowering of a production yield due to flattening treatment by facilitating flattening of pixel electrodes in an electrooptical device such as a liquid crystal device. SOLUTION: A thin film transistor(TFT) 30 is formed on a TFT array substrate 10. A dense insulating film is formed on its upper side by high temperature sintering treatment at >=700 deg.C and subsequently it is flattened by polishing treatment to form a first interlayer insulating film 4. A data line 6a is formed thereon so as to be connected with a source of the TFT via a contact hole 5. The data line is formed with a low-melting metal with an excellent time constant. Furthermore, a second interlayer insulating film 7 is formed on it and a pixel electrode 9a is formed thereon so as to be connected with a drain of the TFT via a contact hole 8. |
