Method for producing crystalline silicon

摘要

An object of the present invention is to provide a method for producing a crystal silicon which enables to produce at a low cost and easily a polycrystalline silicon having a high quality with a low impurity content and a high crystallinity. The method comprises the steps of: crystallizing a molten silicon from the inner bottom of a mold upward while providing to the molten silicone in the mold a temperature having a positive gradient from the inner bottom of the mold upward; and blowing, in the crystallizing step, an inert gas to the surface of the molten silicon from the upper position above the surface thereof to vibrate the surface of the molten silicon in such a manner that cavities are formed in the surface thereof.