| 摘要 |
In order to provide an imaging apparatus that uses an electron-bombarded multiplying tube with an internal solid imaging device with a long life, improved S/N ratio, high resolution, and moreover high sensitivity, an electron-bombarded multiplying tube with a photocathode 13 and a back-illuminated FT-CCD 11 sealed in a vacuum vessel is used as an imaging element. The vacuum vessel is made from a faceplate 12, a ceramic tube 16, and a ceramic stem 17. The photocathode 13 emits photo-electrons from a surface opposite from the incidence plane, in accordance with incident light. The FT-CCD 11 has an incidence plane disposed in the pathway of photo-electrons from the opposite surface. An imaging portion 11a of the FT-CCD 11 has pixels in the vertical direction in the same number as or in greater numbers than the number of output scan lines. A transfer electrode of the imaging portion 11a is constantly applied with a negative voltage during an image accumulation period. By this, dark current can be controlled, the S/N ratio can be improved, resolution can be maintained, and sensitivity can be improved. <IMAGE> |
