Metal-insulator-metal diodes and methods of manufacture

摘要

A metal insulator diode device and method of manufacture are described. The device includes a conductive layer and a metal-insulator layer comprising particles of a refractory metal having an intrinsic oxide coating that are suspended in a dielectric binder. The device also includes a second conductive layer disposed to be in direct contact with the insulator metal layer. The conductive layers can include a metal and a dielectric filler material. In one embodiment, the metal-insulator layer comprising particles of a refractory metal such as tantalum. The metal-insulator layer can also be comprised of particles of a dielectric such as titanium dioxide to increase solids content of the metal-insulator layer.