发明名称 DEVELOPMENT TREATING EQUIPMENT AND DEVELOPMENT TREATING METHOD
摘要 PROBLEM TO BE SOLVED: To prevent generation of defects of a pattern, which is to be caused by the phenomenon that a part of developing mist generated at the time of rinsing permeates above a wafer and sticks on the wafer again in a period from the dropping of rinsings until wafer transfer. SOLUTION: After development, a shielding plate 21 is made to face the whole surface of a wafer 4 and brought into contact with developer 10 stagnating on the wafer 4. Rinsing liquid are dropped from a rinse nozzle 20 on the wafer 4, while the wafer 4 is rotated. Since the wafer 4 is shielded with the shielding plate 21 during rinsing, developing mist can be prevented from sticking on the wafer 4. Thereby improvement in yield, quality and productivity in manufacture of semiconductor can be realized.
申请公布号 JP2000306804(A) 申请公布日期 2000.11.02
申请号 JP19990111901 申请日期 1999.04.20
申请人 MATSUSHITA ELECTRONICS INDUSTRY CORP 发明人 MITO HIDEAKI
分类号 H01L21/027;G03F7/30;(IPC1-7):H01L21/027 主分类号 H01L21/027
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