| 摘要 |
PROBLEM TO BE SOLVED: To raise the heat resistant temperature of a picture element without deteriorating an opening rate and to obtain the infrared picture generation element having a large dynamic range by forming a part of a wiring used in respective picture elements, from a metallic wiring whose main material is high melting point metal. SOLUTION: Relating to an infrared picture generation element 1, a field oxide film for separation 32, a gate electrode 33 formed of polysilicon and the like and N-type impurity areas 34 and 35 are formed on a semiconductor substrate 31 formed of P-type silicon and the like. A conduction control transistor 12 is formed of the gate electrode 33 and the N-type impurity areas 34 and 35. A power wiring 37 formed of a material whose main material is the high melting point metal of W and Ti is electrically connected to the N-type impurity area 35 forming the drain of the conduction control transistor 12. The conduction control transistor 12 controls current flowing in a heat generation resistance body 11. Thus, the heat resistant temperature of a picture element can be improved and a maximum temperature at the time of real use can be set to be high.
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