| 摘要 |
PROBLEM TO BE SOLVED: To solve a hindrance flattening of the surface to be adhered of the upper wiring conducting layer of a semiconductor device in the semiconductor device having a multilayer wiring conducting layer. SOLUTION: This semiconductor device has a constitution, wherein a first lower wiring conducting layer 21 is formed on a semiconductor base body 1, a first insulating layer 31 is formed on this layer 21 in such a way as to cover the layer 21, an organic insulating layer 33 is formed on this layer 31 and the side surfaces of step parts 34 generated on the surface of the layer 31 and is flattened. Moreover, a second insulating layer 32 is formed on this layer 33, and the device is a semiconductor device constituted into a structure. A second wiring conducting layer 22 is formed on this layer 32 in the above constitution, the device is formed into a constitution, wherein slits are formed in the layer 21, and the device is formed into a constitution, wherein these slits are electrically coupled with each other through the layer 22 in the above constitution. The unsatisfactory state to hinder a flow in an application of the layer 33 to a certain part of the surface of the base body 1 is avoided by a pattern of the layer 21.
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