| 摘要 |
PROBLEM TO BE SOLVED: To reduce the aspect ratio of contact to a storage electrode by forming a plate electrode at a position opposite to a storage electrode while sandwiching a capacitor insulation film within a semiconductor substrate and electrically connecting a transistor one of the storage electrode and source/drain regions. SOLUTION: A trench capacitor TC is formed at a p-type silicon substrate 31, and the trench capacitor TC composes a plate electrode 36, an NO (capacitor insulation) film 37, and a polysilicon film 38 that is a storage electrode. The polysilicon film 38 is electrically connected to one of source/drain regions 44 of a MOS transistor MQ via a polysilicon film 43 and a surface connection part 45. One of the source/drain regions 44 is electrically connected to the other of the source/drain regions 44 by applying predetermined voltage to the gate electrode. |
