发明名称 |
MANUFACTURE OF METALLIC WIRING |
摘要 |
PROBLEM TO BE SOLVED: To effectively suppress hillocks while keeping low specific resistance, by anodizing the aluminum wiring or the like containing a rare earth element in the range of specified weight %, in nonaqueous solution containing salt of inorganic oxo acid or organic carboxylic acid. SOLUTION: Aluminum wiring which contains a rare earth element not less than 0.01 wt.% and not more than 8 wt.%, aluminum wiring which contains a rare earth element and whose specific resistance is 10μΩ.cm or under, or aluminum wiring which contains a rare earth element and whose peak intensity ratio between the peak of Al(111) and Al(220) by the X-ray diffraction using a CuKαray or whose integrated intensity ratio Al(220)/Al(111) is not less than 0.01 and not more than 10000 is anodized in nonaqueous solution containing the salt of inorganic oxo acid or the salt of organic carboxyl acid. Metallic wiring containing aluminum whose specific resistance is low and whose hillock suppressive effect is high can be made at low cost. It raises the reliability on the gate wiring of a TFT element or the wiring of an integrated circuit or the like.
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申请公布号 |
JP2000306913(A) |
申请公布日期 |
2000.11.02 |
申请号 |
JP19990135651 |
申请日期 |
1999.05.17 |
申请人 |
MITSUBISHI CHEMICALS CORP |
发明人 |
MIZUTANI BUNICHI;TAKABA HIROSHI;UE MAKOTO;KAMOSHITA YASUO;TSUCHIYA ATSUSHI |
分类号 |
H01L23/52;C25D11/06;G02F1/1343;H01L21/3205;H01L29/786;(IPC1-7):H01L21/320;G02F1/134 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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