Compositions for stripping photoresists in the manufacture of integrated circuits

摘要

A photoresist stripping composition, consisting of dimethyl sulfoxide or n-methyl pyrrolidone and 3-methoxy propylamine, is A novel photoresist stripping composition consists of (by wt.) 30-95% dimethyl sulfoxide (DMSO) or n-methyl pyrrolidone (NM and 70-5% 3-methoxy propylamine (MOPA).