发明名称 APPARATUS AND METHOD FOR DELIVERY OF VAPOR TO A CVD CHAMBER
摘要 CVD reactor (11) is provided with precursor delivery system (12) having evaporation vessel (31) in which high molecular weight solid precursor is converted to vapor by heating it to vapor pressure of at least about 3 Torr. Vessel (31) is connected to CVD reactor chamber (11) through tube (50) of relatively large diameter having small diameter orifice (52). Controller (60) monitors pressure upstream and downstream of orifice (52) and controls flow control device in tube upstream of orifice (52) to produce desired flow rate of precursor vapor into CVD reactor (11). Flow rate is controlled in accordance with standard flow algorithm modified by factors retrieved from look-up flow calibration table in response to measurements of pressures across tube (50).
申请公布号 WO0065127(A1) 申请公布日期 2000.11.02
申请号 WO2000US11201 申请日期 2000.04.26
申请人 TOKYO ELECTRON LIMITED;TOKYO ELECTRON ARIZONA, INC. 发明人 HAUTALA, JOHN, J.;WESTENDORP, JOHANNES, F., M.;BARRISS, LOUISE, S.;MILGATE, ROBERT, W.
分类号 C23C16/52;(IPC1-7):C23C16/44 主分类号 C23C16/52
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