| 摘要 |
PROBLEM TO BE SOLVED: To fabricate a transistor in which reverse short channel effect does not take place by suppressing formation of a recess through etching of the sidewall part of an isolation pattern formed on a semiconductor pattern when a pad oxide film, a sacrifice oxide film, and the like, are removed by etching thereby solving the problem in an STI(shallow trench isolation) technology. SOLUTION: The fabrication method for semiconductor device comprises a step for forming an isolation pattern 15 on a semiconductor substrate 11 such that the surface (15S) of the isolation pattern 15 is higher than the surface of the semiconductor substrate 11, a step for forming a protective film 16 covering the isolation pattern 15 on the surface of the semiconductor substrate 11 and then etching back the protective film 16 while leaving it on the sidewall of the isolation pattern 15 to form a sidewall protective film 17, and a step for exposing the surface of the semiconductor substrate 11 by etching while using the sidewall protective film 17 as a mask.
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