| 发明名称 |
Semiconductor device and manufacturing method thereof |
| 摘要 |
<p>A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. An LDD region 207 provided in an n-channel TFT 302 forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions 217 - 220 provided in an n-channel TFT (pixel TFT) 304 forming a pixel portion greatly contribute to the decrease in the OFF current value. Here, the LDD region of the n-channel TFT of the driving circuit is formed such that the concentration of the n-type impurity element becomes higher as the distance from an adjoining drain region decreases.</p> |
| 申请公布号 |
EP1049167(A2) |
申请公布日期 |
2000.11.02 |
| 申请号 |
EP20000108989 |
申请日期 |
2000.04.27 |
| 申请人 |
SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI |
| 分类号 |
G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):H01L27/12 |
主分类号 |
G02F1/1362 |
| 代理机构 |
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