摘要 |
PROBLEM TO BE SOLVED: To sufficiently secure output voltage width while actualizing reduction in chip area. SOLUTION: A high-voltage output circuit 21 has basic constitution wherein an N channel type LDMOS 22 is connected between a high-voltage power terminal VDDH and an output terminal VOUT, a parallel circuit of a resistor 23 and a Zener diode 24 with its polarity is connected between the gate and source of the LDMOS 22, and an N channel type LDMOS 25 is connected forward between the output terminal VOUT and a ground terminal through the Zener diode 24. In addition to the basic constitution, the high-voltage output circuit 21 has a P channel type LDMOS 26 connected in parallel to the LDMOS 22 and an N channel type LDMOS 27 connected between the high-voltage power terminal VDDH and ground terminal.
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