| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device and a fabrication method thereof in which the barrier performance can be enhanced without destructing a diffusion layer on the surface of a substrate or deteriorating the aspect ratio of the contact hole while preventing fabrication yield from decreasing. SOLUTION: A titanium film 105 is formed, as a barrier layer, on a silicon oxide film 102 and a titanium nitride film 106 is formed thereon. The surface of the titanium nitride film 106 is then oxidized by an oxygen plasma and a titanium nitride film 108 is formed. The titanium nitride film 108 is formed while capturing oxygen from an underlying oxide film 107. According to the method, epitaxial growth is suppressed and the barrier performance is enhanced.
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