发明名称 |
HIGH SPUTTER, ETCH RESISTANT WINDOW FOR PLASMA PROCESSING CHAMBERS |
摘要 |
A window of a plasma processing chamber. The window includes a first dielectric portion having a first electrical thickness and a first resistivity to an etching plasma that is formed within the plasma processing chamber. There is further included a second dielectric portion disposed within the first dielectric portion. The second dielectric portion has a second electrical thickness that is less than the first electrical thickness. The second dielectric portion is formed of a substantially transparent material and has a second resistivity to the etching plasma. The second resistivity is higher than the first resistivity.
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申请公布号 |
WO9967808(A9) |
申请公布日期 |
2000.11.02 |
申请号 |
WO1999US14069 |
申请日期 |
1999.06.22 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
HOWALD, ARTHUR, M.;CHEN, ANTHONY, L.;SCHOEPP, ALAN, M. |
分类号 |
H05H1/46;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01J37/32 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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