发明名称 HIGH SPUTTER, ETCH RESISTANT WINDOW FOR PLASMA PROCESSING CHAMBERS
摘要 A window of a plasma processing chamber. The window includes a first dielectric portion having a first electrical thickness and a first resistivity to an etching plasma that is formed within the plasma processing chamber. There is further included a second dielectric portion disposed within the first dielectric portion. The second dielectric portion has a second electrical thickness that is less than the first electrical thickness. The second dielectric portion is formed of a substantially transparent material and has a second resistivity to the etching plasma. The second resistivity is higher than the first resistivity.
申请公布号 WO9967808(A9) 申请公布日期 2000.11.02
申请号 WO1999US14069 申请日期 1999.06.22
申请人 LAM RESEARCH CORPORATION 发明人 HOWALD, ARTHUR, M.;CHEN, ANTHONY, L.;SCHOEPP, ALAN, M.
分类号 H05H1/46;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01J37/32 主分类号 H05H1/46
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