| 摘要 |
A method running on a computer for simulating the development of residual stress in the growth of IAPVD films using finite element analysis, comprising the stages of simulating the development of strain associated with the condensation of an nth layer of the film, simulating the development of strain associated with the ion bombardment of the set of layers of the film from the nth to the (n-x)th layer, and alternating the above two steps for n=x to n=N, where N is the number of layers in the film and x<<N. The residual stress is calculated based on the levels of strain generated in the above process steps. |
