| 摘要 |
<p>PROBLEM TO BE SOLVED: To detect the magnetization state of a magnetoresistance effect element with high sensitivity on the basis of the ON-OFF state of a field-effect transistor by connecting a resistor in series with one end of the magnetoresistance effect element, and the gate electrode of the field-effect transistor to their connection part. SOLUTION: This magnetic thin-film/semiconductor hybrid element is constituted of a magnetoresistance effect element R1 and a resistor R2 which are connected in series across a constant-voltage source V1 and a ground potential GND. The hybrid element is constituted of a MOS field-effect transistor(MOSFET) M1 whose gate electrode is connected tot the connection part of both. The hybrid element is constituted of a resistor R3 which becomes the load of the MOSFET M1. The hybrid element is constituted of a constant-voltage source V2 by which a DC voltage is applied to the drain electrode of the MOSFET M1 via the resistor R3. Thereby, when the potential difference between the drain electrode of the MOSFET M1 and the ground potential is measured, or when the drain current of the MOSFET M1 is measured, te magnetization state of the magnetoresistance effect element R1 can be detected.</p> |
