| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a semiconductor laser stimulating solid-state laser which is capable of preventing its oscillation laser beam from being deformed in cross section by a method wherein an Nd:YVO4 crystal used as the solid-state laser is prescribed in Nd content. SOLUTION: A semiconductor laser stimulating solid-state laser is of c-axis absorption and c-axis oscillation type, where a laser crystal such as an Nd:YVO4 crystal of small thermal conductivity coefficient is used, a thermal lens effect is generated when an exciting power is increased, and an oscillation laser beam is deformed in cross section. Then, when Nd added to an Nd:YVO4 crystal is reduced to 0.7 at.% in content, the absorption coefficient of the laser crystal is reduced to below 28 cm-1, so that a thermal lens effect is restrained, and a laser beam emitted from the solidstate laser crystal is prevented from being deformed in cross section. A thermal lens effect can be more restrained with a reduction of an Nd content in an Nd:YVO4 crystal, but when a Nd content is smaller than 0.4 at.%, a single vertical mode is deteriorated, so that an Nd content is set larger than 0.4 at.%. Therefore, an Nd content is set more than 0.4 but below 0.7 at.%.</p> |
