发明名称 X-RAY MASK MANUFACTURING APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To improve dimensional accuracy of the pattern of an X-ray mask at etching of the mask, when the mask is manufactured. SOLUTION: In an X-ray mask manufacturing apparatus, which is constituted to etch the surface of an X-ray mask membrane 3 exposed by back etching in such a way that the surface of the membrane 3 faces opposite to the projecting surface of a projecting section provided on a stage or a projecting section 21, provided on a holder arranged on the stage with a clearance L in between and a heat transfer gas is supplied into the clearance L, a flexible porous member 23 is held on the side face of the projecting section near the projecting surface. In addition, the projecting surface is constituted so that the distance between the membrane 3 and the projecting surface varies, depending on the location.</p>
申请公布号 JP2000306814(A) 申请公布日期 2000.11.02
申请号 JP19990114997 申请日期 1999.04.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 YABE HIDETAKA;KITAMURA KAEKO
分类号 H01L21/027;G03F1/22;(IPC1-7):H01L21/027;G03F1/16 主分类号 H01L21/027
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