| 摘要 |
<p>PROBLEM TO BE SOLVED: To make easily readable data by reducing a reference current value that is compared with the cell current in a semiconductor storage device where each memory cell is composed of two kinds of transistors with mutually different in resistance and threshold, and a selected memory cell allows a cell current corresponding to read data to flow. SOLUTION: Althrough NOMS 1 and DMOS (depression-type NMOS) 2 being connected to a data cell row 30A in series as a memory cell allow a cell current Icell to flow, the NMOS 1 and DMOS 2 are alternately connected to current paths 30-1 and 30-2 for generating a reference current Iref. Each of the current paths 30-1 and 30-2 allows the reference current Iref to flow to either one of them on reading, thus reducing the current value of the reference current Iref, for example, as compared with when the current path is composed simply by the NMOS 1.</p> |
