| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus, capable of efficiently generating a self-bias potential and performing highly accurate surface treatment, even when a sufficiently large ground area cannot be secured compared with an area of a wafer to be treated. SOLUTION: This plasma treatment apparatus is composed of a vacuum chamber 1, which is connected to a vacuum pumping device and can reduce pressure inside, a gas supply device 4 for supplying gases into the vacuum chamber 1, means for generating plasma in the vacuum chamber 1, a wafer 10 to be treated, a wafer electrode 9 capable of placing thereon the wafer 10 to be treated, a high-frequency power source 12 for supplying high-frequency power to the wafer electrode 9, a matching circuit 11 connected between the wafer electrode 9 and the high-frequency power source 12 and a ground electrode 8 provided in the vacuum chamber 1. The wafer electrode 9 is grounded via a potential adjusting mechanism. Consequently, even when the ground electrode area is smaller than the wafer to be treated, a sufficient self-bias potential can be generated. Since ions in plasma are injected efficiently into material to be treated, highly accurate surface treatment can be performed. |
