| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon thermopile, which is raised in sensitivity by forming a polysilicon film at a high integration degree and has high resolution appropriate as an image sensor. SOLUTION: An insulating film 2 is provided on a silicon substrate, a polysilicon film 3 is continuously formed in a comb-teeth form on the upper surface of this film 2 this polysilicon film 3 is doped with p+ impurities and n+ impurities, a plurality of rectangular p+-doped polysilicon regions 4 and a plurality of rectangular n+-doped polysilicon regions 5 are alternately formed in a state that the regions 4 and the regions 5 are independent from each other to constitute a plurality of thermocouples 6, contact holes 7 are formed so as to lie over the adjacent regions 4 and 5 and the regions 4 and 5 coming into contact with each other in these contact holes 7 are electrically connected with each other.
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