| 摘要 |
PROBLEM TO BE SOLVED: To improve the throughput of an insulated gate field effect transistor manufacturing method by making an amorphous silicon film crystallizable at a relatively low temperature through formation of island-like films containing specific metals on the amorphous silicon film and annealing the island-like films at a specific temperature. SOLUTION: A base silicon oxide film 1B is formed on a substrate 1A by the plasma CVD method, and an amorphous silicon film 1 is formed on the film 1B by the CVD method. Then the film 1 is dehydrogenated by annealing the film 1 for 0.1-2 hours at a temperature of 350-450 deg.C and island-like films, dots, particles, clusters, lines, etc., containing nickel, iron, cobalt, and platinum are formed on or under the film 1 and annealed at a temperature, which is lower than the crystallization temperature of ordinary amorphous silicon by, preferably, 20-150 deg.C, namely for example, at 580 deg.C or lower. Therefore, the crystallization started from two island-like nickel films, etc., come into collision with each other and the crystallization ends by leaving nickel silicide 3A in the middle. |
