| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor integrated circuit device where a power supply wiring region can be lessened in area on a chip, and a semiconductor integrated circuit can be enhanced in degree of integration. SOLUTION: Ring-shaped VDD.GND power supply peripheral rings 16a and 16b composed of an uppermost layer as a third wiring layer 14 and a lowermost layer as a first wiring layer 12 of a three-layered wiring structure which comprises a middle layer as a second wiring layer 13 besides the first wiring layer 12 and the third wiring layer 14 are formed around a micro core 11. The power supply peripheral rings 16a and 16b are arranged overlapping one another on a plan view, a positive power supply VDD1 and a negative power supply GND1 are guided to the power supply peripheral rings through the second wiring layer 13 as a middle layer. The positive power supply VDD1 wiring layer 13 is connected to the power supply peripheral ring 16a through a through- hole contact 18, and the negative power supply GND1 wiring layer 13 is connected to the power supply peripheral ring 16b through a through-hole contact 17.
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