| 摘要 |
PROBLEM TO BE SOLVED: To prevent a train of output light pulses from changing in intensity even if a train of injected light pulses changes in polarization mode by a method wherein a well layer is put into a tensile strain state, and a barrier layer is put into a compressive strain state. SOLUTION: This harmonic light synchronous mode synchronous semiconductor laser 10 is composed of a gain region 12 and a saturable absorption region 14. The semiconductor laser 10 is formed of InP semiconductor. Concretely, the gain region 12 and the saturable region 14 are possessed of a substrate in common, and an N-InP substrate 16 is made to serve as the above substrate. A non-doped InP multi-quantum well layer 18 is formed on the N-InP substrate 16. The non-doped InP multi-quantum well layer 18 is composed of a ten-layered well layer and a nine-layered barrier layer. The well layer and the barrier layer are each put into a tensile strain state and a compressive strain state. Concretely, the ratioes of tensile strain and compressive strain to the N-InP substrate 16 are each set at -0.47% and +0.52%.
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