发明名称 VOLTAGE CONTROLLED OSCILLATOR AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To enabled constitution on a CMOS process, to reduce an area, to improve the C/N and distortion rate of an oscillation signal and to widen the oscillation frequency range by providing an inverted amplifier composed of a field-effect transistor for controlling the amplification factor with voltage and a voltage control capacitor including a capacitor connected between the input and output of that amplifier. SOLUTION: Since an oscillation frequency can be controlled by a frequency varying means using a mirror capacitor 406 is using an amplifier 420 composed of an MOS transistor, a voltage controlled oscillator(VCO) 400 composed of the MOS transistor can be provided by using the CMOS process. Since the area of the mirror capacitor 406 is about 1/4 to the veriable capacity of a varicap under using, the area of the VCO 400 formed on an integrated circuit can be miniaturized. Since oscillation is performed by resonating the capacitor 409 and the inductor 411, the oscillation signal is in the shape of sine wave.
申请公布号 JP2000307344(A) 申请公布日期 2000.11.02
申请号 JP19990109931 申请日期 1999.04.16
申请人 FUJITSU LTD 发明人 NAGATA KIMIHIKO
分类号 H03B1/00;H03B5/12;H03L7/099;H03L7/18;H04B1/40;(IPC1-7):H03B5/12 主分类号 H03B1/00
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