| 摘要 |
<p>A heterostructure field-effect transistor used as a switching element for high-power control. A doped AlGaN layer (3) is provided on each side of a GaN layer (2) of high purity, resulting in two heterojunctions between the AlGaN layer (3) and the GaN layer (2). At least one such heterostructure (8) is provided, and a channel (9) is formed in each heterojunction on the GaN layer (2) between source and drain. Second doped GaN layers (4) are preferably provided on the uppermost layer of the source/drain region of the heterostructure (8). A source electrode (5) and a drain electrode (6) are provided on the second GaN layers (4), respectively, and a gate electrode (7) is formed between the second GaN layers (4).</p> |
