VISIBLE LIGHT EMITTING DEVICE FORMED FROM WIDE BAND GAP SEMICONDUCTOR DOPED WITH A RARE EARTH ELEMENT

摘要

A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths base d upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN o r alloys thereof doped with a lanthanide element such as Er, Pr or Tm. The lig ht emission can be enhanced by annealing the WBGS.