| 摘要 |
A method for selective deposition of a material, such as copper, to form planarized inlaid device interconnect structures, the method suppressing deposition of the material at other than the defined interconnect inlaid metal line trenches and via plug holes. Once a formation is filled with metallization material, deposition is automatically ceased in situ to form a globally planarized interconnect structure. In one embodiment, a blocking agent layer inhibits material nucleation and deposition at the substrate surface plane until the formation is filled, and then flows over the filled inlaid metallization structure to cease further material deposition and to form a globally planarized surface without a need for chemical-mechanical polishing of the metallization material. In another embodiment, an enhancement agent is provided within formations to reduce material nucleation time, resulting in selective deposition of the material proximate to the enhancement agent layer within trenches and holes. A nucleation suppressing agent can be included in the deposition ambient to increase nucleation delay and to suppress material deposition over the patterned field regions and on the formation sidewalls, thus limiting material deposition to within the trenches or holes from the bottom upward. Placement of the enhancement agent layer at the bottom of a device formation features promotes material deposition from the bottoms of the formation features up towards the substrate field surface plane, resulting in improved void-free filling of the via holes and trenches with large-grain inlaid metal for globally planarized interconnect fabrication. |
