| 摘要 |
PROBLEM TO BE SOLVED: To improve temperature adjustment for a shower plate and implement uniform diffusion of a process gas by performing dry etching, while arranging upper and lower electrodes within an etching chamber, with the upper electrode having a cooling chamber and a gas diffusion chamber formed therein and the lower electrode serving to fixedly support a wafer. SOLUTION: A high-frequency voltage is applied to an upper electrode 2 arranged within an etching chamber, and a high-frequency bias is applied to a lower electrode on which a wafer is mounted. Upon application of the high-frequency voltage to the electrode 2, electromagnetic waves are radiated within the etching chamber to generate a plasma. At this time, the electrode 2 is heated, resulting in raised temperature. Within the electrode 2, a cooling chamber 7 and a gas diffusion chamber 8 are formed and a shower plate 12 is fixed in contact with the chamber 7. Therefore, a coolant cools the chamber 7 and exchanges heat with the plate 12, whereby temperature adjustment can be made. Furthermore, a process gas is diffused uniformly within the etching chamber from nozzles 11 via entrances 10 and the chamber 8. |
