SEMICONDUCTOR DEVICE ESD PROTECTION DEVICE AND MANUFACTURING THE SAME

摘要

PURPOSE: A method for forming an electrostatic protection device is provided to form an optimized electrostatic protection device by forming an electrostatic protection device the device characteristic of which is varied based on a design rule of semiconductor devices. CONSTITUTION: A method for forming an electrostatic protection device forms a photoresist layer on a semiconductor substrate. Channel stop impurity ions are injected to form a channel stop layer below a device isolation region. A thermal oxidization process is then performed to form a field oxide film. N- high concentration impurity ions are injected into the second active region of the p well(3) neighboring to the first active region provided in the n-well(2) to form N+ impurity layers(7,8), respectively. An insulating layer(10) is formed on the entire surface and a contact region for wire of respective active regions is then formed. A metal layer is formed to contact the active regions and the first and third impurity layers(7,9) are connected/grounded and the second impurity layer(8) is connected to an output pad(0P), thus forming an electrostatic protection device.