| 摘要 |
PURPOSE: A method for checking pattern defects is provided to exactly find pattern defects by storing a design pattern signal for the first and second layer patterns at an additional base memory to compare the stored signal with a measured signal. CONSTITUTION: A method for checking pattern defects forms a multi-pattern in a wafer. Data of each of design patterns depending on locations are stored at a database memory (20). A pattern detector(30) detects the pattern formed on the wafer. A signal converter(40) converts the signal detected by the pattern detector into a measurement pattern signal. At this time, the signal is mixed into a single signal with each of layers stacked. A signal comparator(50) compares the measurement pattern signal with the design pattern signal for each of the layers stored at the memory device. If the signals are consistent, a defect signal is outputted as '0'. On the other hand, if the signals are not consistent, a defect signal is outputted as '1'.
|
