METHOD FOR ETCHING TITANIUM NITRIDE OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: An etching method of a titanium nitride is provided to improve an etching selectivity and an etching profile of the titanium nitride(TiO2) by using Cl2 gas. CONSTITUTION: The titanium nitride(TiO2) film is used as an anti-diffusion layer after depositing a ferroelectric film, such as BST or PZT. The titanium nitride(TiO2) is etched by using a plasma containing chlorine radicals. The plasma containing chlorine radicals is used of Cl2 gases. The plasma further comprises an inert gas. Also, the titanium nitride is etched by the Cl2 gas of less than 200 sccm.