METHOD FOR ETCHING TITANIUM NITRIDE OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: An etching method of etching a titanium nitride is provided to improve an etching selectivity and an etching profile of the titanium nitride(TiO2) by using Cl2 and HBr gases. CONSTITUTION: The titanium nitride(TiO2) film is used as an anti-diffusion layer after depositing a ferroelectric film, such as BST or PZT. The titanium nitride(TiO2) is etched by using chlorine gas and HBr gas. The chlorine gas is used of Cl2. Also, the titanium nitride is etched by the Cl2 gas of less than 200 sccm and the HBr gas of less than 100 sccm.