MANUFACTURING METHOD OF TEST PATTERN FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a test pattern is provided to easily measure variations in a characteristic of a device due to humidity(H2O) after a pressure cooking test(PCT). CONSTITUTION: A method for manufacturing a test pattern forms a field oxide film, a gate oxide film(3), a gate electrode(4) and an impurity junction region(5) on a silicon substrate(1). An underlying insulating film(6), the first interlayer dielectric(7) and the second interlayer dielectric(8) being a passivation film are stacked on the entire surface. The second interlayer dielectric, the first interlayer dielectric and a given portion of the underlying insulating film are etched to form a groove. The gate electrode(4) is formed by means of an etching process using a repair mark designed at a location separated by a given distance from a mask.