| 摘要 |
PURPOSE: A planarization method of an interlayer dielectric is provided to prevent voids and particles, and easily control concentrations of impurities by using a silicon nitride as a buffer layer and an USG(undoped silicate glass) instead of a BPSG(boro phosphor silicate glass). CONSTITUTION: On an active region defined by a field oxide(33), a gate oxide(35) and a gate(37) are formed. Then, an impurity doped region(39) is formed by implanting ions. A silicon nitride(41) is formed on the entire surface of the resultant structure by performing N2 plasma treatment. Then, an USG film(43) is formed on the silicon nitride(41).
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