METHOD FOR MANUFACTURING DRAM

摘要

PURPOSE: A method for manufacturing DRAM is provided to remove polymer on the surface of semiconductor devices and to obviate additional contaminant generated in a chamber and due to a charging effect in an ashing method. CONSTITUTION: A method for manufacturing DRAM forms a gate oxide film(112) on a semiconductor substrate(110). The first polysilicon film(114) is formed on the gate oxide film(112). A W film(116) being a gate electrode is formed on the first polysilicon film(114). An insulating film(118) is formed on the oxide film(112) including the gate electrode(116). The second polysilicon film(120) for forming a bit line is formed on the insulating film(118) and an etch-back process is then performed. A cleaning process of removing polymer generated in the etch-back process is implemented. A WSi film(122) is formed on the second polysilicon film(120).