METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICES USING MULTIPLE ANTI-DIFFUSION LAYERS

摘要

PURPOSE: A contact formation method is provided to maximize a diffusion barrier effect by using multiple anti-diffusion layers. CONSTITUTION: An insulating layer(12) is formed on a conductive layer(10), and a contact hole is formed by etching the insulating layer(12). A metal conductive layer(16) is formed on the contact hole and the insulating layer(12). Then, double anti-diffusion layers(18,20) made of TiN are sequentially formed on the metal conductive layer(16) in same processing conditions. Then, a metal plug(22) is filled into the contact hole by CVD(chemical vapor deposition) in WF6 atmosphere. The metal plug(22) is a tungsten plug.