发明名称 |
MEMORY DEVICE HAVING SEPERATED CLOCK INPUT BUFFER |
摘要 |
PURPOSE: A semiconductor memory device with a separated clock input buffer is provided to make an access time with high speed and reduce a consumption of electric power at stand-by mode by separately disposing a first clock input buffer for generating an enable signal of a data input buffer and a second clock input buffer for generating a signal to latch an input signal. CONSTITUTION: A first clock input buffer(10) buffers and outputs an applied clock signal in order to output data on an output pad(DQ pad). An output-enable-signal generator(30) an output-enable-signal by using a signal (clkt2) which is generated by inverting an output signal of a first clock input buffer. A data output buffer(40) buffers an output signal and read signal of the output-enable-signal generator(30) to output the same. An input signal buffer(50) buffers and outputs an input signal in order to latch an external input signal. A delay circuit(60) delays an output signal of the input signal buffer(50), for a certain time. A latch signal(70) latches he output signal buffer(50) by using a signal(clkt4) outputted through a second clock input buffer(90) for buffering and outputting a clock signal applied thereto and a buffering unit(20) composed of an odd number of invertor.
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申请公布号 |
KR100265591(B1) |
申请公布日期 |
2000.11.01 |
申请号 |
KR19970019281 |
申请日期 |
1997.05.19 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD |
发明人 |
KIM, JUNG-PIL |
分类号 |
G11C11/407;G11C7/10;G11C7/22;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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