CAPACITOR OF SEMICONDUCTOR INTERGRATED CIRCUIT AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A capacitor of a semiconductor IC(Integrated Circuit) and a method for manufacturing the same are provided to improve a characteristic of a capacitor by using a metal with a stable conductive characteristic. CONSTITUTION: A lower electrode(102a) is formed on a predetermined portion of an insulating substrate(100). An interlayer dielectric(104) is formed on the insulating substrate(100) including the lower electrode(102a). A via hole is formed on the interlayer dielectric(104) to expose a predetermined surface of the lower electrode(102a). A dielectric layer(106) is formed within the via hole and on the interlayer dielectric(104). An upper electrode(112) having a stacked structure of a conductive plug(108a) and a conductive pattern(110a) is formed on the dielectric layer(104) including the via hole.