发明名称 ROW DECODER IN MEMORY DEVICE
摘要 PURPOSE: A row decoder of a semiconductor memory device is provided to reduce an area of a chip design and to improve turn-on time of a word line by combining a plurality of word line drivers with one word time driver and immediately turning-on a word line after receiving an address indicating the word line from an address selector. CONSTITUTION: An address selector(50) selects a specific address, wherein a number of the address selector(50) is 64. A global row decoder(40) enables a specific word-line. The global row decoder(40) includes a word-line driver for driving a plurality of word-lines. The address selector(50) selectively connects the word-line driver to the specific word-line according to a certain row address signal. The word line driver is consist of a word-line boosting signal input terminal and a plurality of MOS transistors connected in serial between grounds.
申请公布号 KR100265590(B1) 申请公布日期 2000.11.01
申请号 KR19970017501 申请日期 1997.05.07
申请人 HYUNDAI ELECTRONICS IND. CO., LTD 发明人 CHA, JAE-YONG
分类号 G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/407
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